宋兴娟

发布时间：2022年09月17日 19:15 阅读人数：

	姓名：宋兴娟	研究方向：
	导师类型：	主讲硕士生课程：
	职称：	主讲博士生课程：
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姓名：宋兴娟

研究方向：二维半导体材料与器件，低功耗光电器件，智能仿生芯片

导师类型：硕士生导师主讲硕士生课程：电工电子学（三）

职称：讲师

专业：电子科学与技术

个人简介

宋兴娟，女，博士，湖北工业大学理学院讲师。2021年毕业于华中科技大学并获博士学位；从事二维半导体纳米材料光电子器件的制备及其在光电、智能仿生方面的用研究。在Applied Surface Science、IEEE Transactions on Electron Devices、Energy 、Nanotechnology等SCI期刊发表了10余篇研究论文。

科研项目

1. 国家自然科学基金青年项目，62204080，用于光电忆阻的铁电栅基MoS2晶体管界面优化与仿生突触研究，2023/1-2025/12，30万，主持，在研。

科研成果

1.Xingjuan Song, Jingping Xu, Lu Liu, Pui-To Lai, and Wing-Man Tang. “Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric”. Applied Surface Science, 481, PP. 1028-1034, 2019.

2.Xingjuan Song, Jingping Xu, Lu Liu, Yuheng Deng，Pui-To Lai, and Wing-Man Tang. Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors. Nanotechnology, Vol 31, PP. 135206, 2020.

3.Xingjuan Song, Dongming Zhang. Bimetallic Ag-Ni/C particles as cathode catalyst in AFCs (alkaline fuel cells). Energy, Vol 70, pp. 223-230, 2014.

4. Xingjuan Song, Jingping Xu, Lu Liu*. High-quality CVD-MoS2 synthesized on Al2O3 for high-performance field-effect transistors through surface modification. IEEE Transactions on Electron Devices, 67(11): 5196-5200, 2020.

5. Xingjuan Song, Jingping Xu*, Lu Liu, Pui-To Lai and Wing-Man Tang.Comprehensive investigation on treating the interfaces of stacked gate dielectric in MoS2 transistors by fluorine plasma, Applied Surface Science, 542: 148437, 2021.

6.Jun Zhao, Dongming Zhang, Xingjuan Song. Simple and eco-friendly preparation of silver films coated on copper surface by replacement reaction. Applied Surface Science, 258(19):7430-7434, 2012.

7.Jing-Ping Xu , Wen-Xuan Xie, Lu Liu, Xinyuan Zhao, Xingjuan Song, Pui-To Lai,. Effects of trapped charges in gate dielectric and high- k encapsulation on performance of mos2 transistor. IEEE Transactions on Electron Devices, 66(2), 1107-1112, 2019.

8.Jingping Xu, Ming Wen, Xinyuan Zhao, Lu Liu, Xingjuan Song, Pui-To Lai and Wing-Man Tang Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric, Nanotechnology, 29(34), 2018.